? 2003 ixys all rights reserved g = gate, c = collector, e = emitter, tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c90 t c = 90 c28a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 56 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = v ces t j = 25 c 100 a v ge = 0 v t j = 125 c 500 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.0 v low v ce(sat) igbt v ces = 600 v i c25 = 40 a v ce(sat) = 2.0 v features z international standard packages z low v ce(sat) - for minimum on-state conduction losses z high current handling capability z mos gate turn-on - drive simplicity applications z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switch-mode and resonant-mode power supplies advantages z easy to mount with 1 screw (isolated mounting screw hole) z low losses, high efficiency z high power density ds98570a(08/03) ixgh 28n60b ixgt 28n60b c (tab) g c e to-247 ad (ixgh) to-268 (ixgt) g e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 15 25 s pulse test, t 300 s, duty cycle 2 % c ies 1500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 130 pf c res 42 pf q g 68 100 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 15 30 nc q gc 20 40 nc t d(on) 15 ns t ri 25 ns t d(off) 175 400 ns t fi 260 400 ns e off 24mj t d(on) 15 ns t ri 25 ns e on 0.2 mj t d(off) 400 ns t fi 400 ns e off 3mj r thjc 0.83 k/w r thck to-247 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ? inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 ? to-247 ad outline dim. m illimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc 1 2 3 ixgh 28n60b ixgt 28n60b to-268 outline terminals: 1 - gate 2 - collector 3 - emitter tab - collector terminals: 1 - gate 2 - collector 3 - emitter tab-collector
? 2003 ixys all rights reserved ixgh 28n60b ixgt 28n60b fig. 2. extended output characteristics @ 25 deg. c 0 40 80 120 160 200 240 0 2 4 6 8 101214161820 v c e - volts i c - amperes v ge = 15v 5v 7v 9v 11v 13v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 0.511.522.533.5 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 0.5 1 1.5 2 2.5 3 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalized i c = 28a i c = 14a v ge = 15v i c = 56a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1 1.5 2 2.5 3 3.5 4 4.5 5 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 56a 28a 14a fig. 6. input adm ittance 0 10 20 30 40 50 60 70 80 90 456 789 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixgh 28n60b ixgt 28n60b fig. 7. transconductance 0 5 10 15 20 25 30 35 0 102030405060708090 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of e off on r g 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 10 30 50 70 90 110 130 150 r g - ohms e off - millijoules i c = 14a t j = 125oc v ge = 15v v ce = 480v i c = 28a i c = 56a fig. 9. dependence of e off on i c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 10 20 30 40 50 60 i c - amperes e off - millijoules r g = 10 ? r g = 82 ? - - - - v ge = 15v v ce = 480v t j = 125oc t j = 125oc t j = 25oc fig. 10. dependence of e off on temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 56a r g = 10 ? r g = 82 ? - - - - v ge = 15v v ce = 480v i c = 28a i c = 14a fig. 11. dependence of sw itching time on r g 200 300 400 500 600 700 800 900 1000 1100 1200 10 30 50 70 90 110 130 150 r g - ohms switching time - nanosecond i c = 14a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 28a i c = 56a fig. 12. dependence of sw itching time on i c 150 200 250 300 350 400 450 500 550 600 10 20 30 40 50 60 i c - amperes switching time - nanosecond t d(off) t fi - - - - - - r g = 10 ? v ge = 15v v ce = 480v t j = 125oc t j = 25oc
? 2003 ixys all rights reserved ixgh 28n60b ixgt 28n60b fig. 16. maxim um transient therm al resistance 0.1 1 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) 0.5 fig. 14. gate charge 0 3 6 9 12 15 0 102030 40506070 q g - nanocoulombs v g e - volts v ce = 300v i c = 28a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of sw itching time on temperature 150 200 250 300 350 400 450 500 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanosecond i c = 56a t d(off) t fi - - - - - - r g = 10 ? v ge = 15v v ce = 480v i c = 28a i c = 14a i c = 56a
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